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SGT MOSFET

HYG018N03LS1D

HYG018N03LS1D

The N-channel MOSFET in TO-252-2L package features VDS 30 V and RDS(on) 1.7 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as AC-DC synchronous rectification, battery management system, motor drives,DC-DC converter and other application fields.

Features


Low RDS(on)

Low FOM

Low input Capacitance

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advanced Technology  




Benefits


Low conduction losses 

Strong shock resistance

Outstanding thermal and dissipation capability

High reliability

High power density

Stable technical capability

Lower drive loss

E-Installation




Applications


BMS   

HYG018N03LS1D

模型