Language
HYG018N03LS1D
The N-channel MOSFET in TO-252-2L package features VDS 30 V and RDS(on) 1.7 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as AC-DC synchronous rectification, battery management system, motor drives，DC-DC converter and other application fields.
Features
Low RDS(on)
Low FOM
Low input Capacitance
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Lower drive loss
E-Installation
Applications
BMS
