Language
HYG025N06LS1P
The N-channel MOSFET in TO-220FB-3L package features VDS 60 V and RDS(on) 2.5 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as synchronous rectification, motor drives, high-frequency DC-DC converter and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
Benefits
Low conduction losses
High reliability
Stable technical capability
Applications
Synchronous Rectification
