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SGT MOSFET

HYG025N06LS1C2

HYG025N06LS1C2

The N-channel MOSFET in PDFN8L(5x6) package features VDS 60 V and RDS(on) 2.2 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as synchronous rectification, motor drives, high-frequency DC-DC converter and other application fields.

Features


Low RDS(on) 

Outstanding Gate Charge

Low input Capacitance

ROHS Compliant





Benefits


Low conduction losses 

High reliability

Stable technical capability





Applications


Synchronous Rectification

High-frequency DC-DC Converter

Electronic Speed Controller

Power Tools



HYG025N06LS1C2

模型