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SGT MOSFET

HYG025N06LS1D

HYG025N06LS1D

The N-channel MOSFET in TO-252-2L package features VDS 60 V and RDS(on) 2.6 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as synchronous rectification, motor drives, high-frequency DC-DC converter and other application fields.

Features


Low RDS(on)    

Outstanding Gate Charge

Low input Capacitance

ROHS Compliant





Benefits


Low conduction losses 

High reliability

Stable technical capability





Applications


Power Tools

Synchronous Rectification

 

HYG025N06LS1D

模型