Language
HYG054N09NS1P
The N-channel MOSFET in TO-220FB-3L package features VDS 85 V and RDS(on) 4.8 Ohm, using the SGT structure technology. It is suitable for DC motor and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
Benefits
Low conduction losses
High reliability
Stable technical capability
Applications
Electric Vehicle Controller
