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SGT MOSFET

HYG210N06LS1S

HYG210N06LS1S

The N-channel MOSFET in SOP-8L package features VDS 60 V and RDS(on) 16 Ohm, using the Trench structure technology. It is suitable for low-frequency applications, such as LED applications, small motor drives and other application fields.

Features


Outstanding Gate Charge

Low input Capacitance

ROHS Compliant




Benefits


Low conduction losses 

High reliability

Stable technical capability





Applications


LED Applications

AC-DC/DC-DC Switched-mode Power Supplies

HYG210N06LS1S

模型