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SGT MOSFET

HYG090N06LS1S

HYG090N06LS1S

The N-channel MOSFET in SOP8L package features VDS 60 V and RDS(on) 8.6 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as AC-DC synchronous rectification, high-frequency DC-DC converter and other application fields.

Featrures


Low RDS(on)

Low FOM

Low input Capacitance

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advanced Technology




Benefits


Low conduction losses

Outstanding thermal and dissipation capability

High reliability

High switching frequency

High power density

Stable technical capability

Lower drive loss

E-Installation





Applications


AC-DC/DC-DC Switched-mode Power Supplies

Power Delivery

Synchronous Rectification

LED Applications


HYG090N06LS1S

模型