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SGT MOSFET

HYG065N07NS1D

HYG065N07NS1D

The N-channel MOSFET in TO-252-2L package features VDS 70 V and RDS(on) 6 Ohm, using the SGT structure technology. It is suitable for low-frequency applications, such as motor drives, battery management system and other application fields.

Features


Low RDS(on)

Outstanding Gate Charge

ROHS Compliant

100% DVDS Tested

100% UIL Tested




Benefits


Low conduction losses  

Strong shock resistance 

High reliability

Stable technical capability




Applications


BMS

LED Applications

HYG065N07NS1D

模型