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SGT MOSFET

HYG052N06LS1D

HYG052N06LS1D

The N-channel MOSFET in DPAK package features VDS 60 V and RDS(on) 5.5 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as AC-DC synchronous rectification, motor drives, high-frequency DC-DC converter and other application fields.

Features


Low RDS(on)

Outstanding FOM

Low input Capacitance

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advanced Technology




Benefits


Low conduction losses  

Strong shock resistance 

Outstanding thermal and dissipation capability

High reliability

High power density

Stable technical capability

Lower drive loss

E-Installation





Applications


AC-DC/DC-DC  Switched-mode Power Supplies

Power Tools

LED Applications

HYG052N06LS1D

模型