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SGT MOSFET

HYG023N04LS1D

HYG023N04LS1D

The N-channel MOSFET in TO-252-2L package features VDS 40 V and RDS(on) 2 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as synchronous rectification, motor drives, high-frequency DC-DC converter and other application fields.

Features


Low RDS(on) 

Outstanding Gate Charge

Low input Capacitance

100% DVDS Tested

100% UIL Tested





Benefits


Low conduction losses   

Low switch  losses   




Applications


Synchronous Rectification

Power Tools


HYG023N04LS1D

模型