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SGT MOSFET

HYG014N03LS1C2

HYG014N03LS1C2

This is a 30V,1.2mΩ, PDFN5*6 package product, using SGT structure technology, It is suitable for battery management system, DC-DC and other application fields.

特性

Low RDS(on)

ROHS Compliant 

100% DVDS Tested

100% UIL Tested



优势

Low conduction losses

Strong shock resistance



应用

Battery management system、DC-DC

HYG014N03LS1C2

模型