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SGT MOSFET

HYG065N15NS1P

HYG065N15NS1P

The N-channel MOSFET in TO-220FB-3L package features VDS 150 V and RDS(on) 6 Ohm, using the SGT structure technology. It is suitable for motor drives and other application fields.

Features


Outstanding Gate Charge

Low input Capacitance

ROHS Compliant

100% DVDS Tested




Benefits


Low conduction losses 

Strong shock resistance

High reliability

Stable technical capability






Applications


Electric Vehicle Controller

Inverter

HYG065N15NS1P

模型