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MOSFET Application Scheme
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SGT MOSFET

MOSFET
Application Scheme
HYG035N10NS2B

HYG035N10NS2B

此器件为100V、3.2mΩ、TO-263-2L封装产品，采用SGT流片工艺，可满足如保护板，电机驱动等应用领域。

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Huayi Microelectronics Co., Ltd.

Add：No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
E-mail：hy@hymexa.com;xa.sales@hymexa.com
Tel：+86 29-86685706