Language
HYG400N15NS1P
The N-channel MOSFET in TO-220FB-3L package features VDS 150 V and RDS(on) 32 Ohm, using the SGT structure technology. It is suitable for DC-DC and other application fields.
Features
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
100% DVDS Tested
Benefits
Low conduction losses
High reliability
Stable technical capability
Applications
AC-DC
DC-DC
