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SGT MOSFET

HYG028N10NS1B

HYG028N10NS1B

This is a 100V,2.6mΩ,TO-263-2L package product,using SGT structure technology, It is suitable for Battery management system, DC motor and other application fields.

Features

Low RDSON

Excellent QG

Low input capacitance

ROHS Compliant

100% DVDS Tested



Advantage

Low conduction losses

Strong shock resistance

Stable technical capability

High reliability



Application Fields

BMS   

HYG028N10NS1B

模型