Language
HYG080ND03LA1S
The Dual N-channel MOSFET in SOP8L package features VDS 30 V and RDS(on) 9.5 Ohm, using the Trench structure technology. It is suitable for low-frequency applications, such as motor drives, battery management system, load switch and other application fields.
Features
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
Efficiency Improvement
Benefits
Low conduction losses
Strong shock resistanc
High reliability
Stable technical capability
Applications
BMS
Load Switch
DC-DC
Synchronous Rectification
