Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Dual N

HYG130ND03LR1C2

HYG130ND03LR1C2

The Dual N-channel MOSFET in PDFN8L(5x6) package features VDS 30 V and RDS(on) 11 Ohm, using the Trench structure technology. It is suitable for DC-DC, wireless charging and other application fields.

Features


Low RDS(on) 

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Efficiency Improvement






Benefits


Low switch losses  

High reliability

Stable technical capability





Applications


DC-DC

Wireless Charing

HYG130ND03LR1C2

模型