Language
HYG130ND03LR1C2
The Dual N-channel MOSFET in PDFN8L（5x6） package features VDS 30 V and RDS(on) 11 Ohm, using the Trench structure technology. It is suitable for DC-DC, wireless charging and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Efficiency Improvement
Benefits
Low switch losses
High reliability
Stable technical capability
Applications
DC-DC
Wireless Charing
