Language
HYG850PD02KA1C6
The double P-channel MOSFET in DFN6L(0202) package features VDS -20 V and RDS(on) 65 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, signal drive and other application fields.
Features
Low RDS(on)
Low FOM
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Lower drive loss
Applications
Load Switch
Signal Drive
