Language
HYG170C03LR1S
The N+P structure MOSFET in SOP8L package features VDS 30 V and RDS(on) 12.9/21.6 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as DC-DC, motor drives and other application fields.
Features
Low RDS(on)
Low input Capacitance
ROHS Compliant
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Motor Drives
Wireless Charging
DC-DC
