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Half Bridge

Product Screening

Ciss Typ(pF)
Part
Vds Min (V)
ID@TC=25℃
RDS(on) Max 10V(mΩ)
RDS(on) Max 4.5V(mΩ)
PD@TC=25℃ (W)
Vgs(±V)
Vth (V)
Ciss Typ(pF)
Qg Typ(nC)
Configuration
Package
Application
同类型号
Status
HYG190C04LR1S
40 / -40
9 / 7
21 / 37
27 / 62
3
20
1~3/-1~-3
553
14
N+P
SOP8L
Electric tools
HYG190C04LR1S
Product Features:

This is a 40V/-40V、18mΩ/31mΩ,SOP8L package product, using Trench structure technology, It ...

HYG150C04LR1C2
40 / -40
32 / -33
13.8 / 20
16.5 / 31
36
20
1~1.8
1088
25.4
N+P
PDFN8L(5x6)
Electric tools
HYG150C04LR1C2
Product Features:

This is a 40/-40V,PDFN8L(5x6) package product, using Trench structure technology, It is su...

HYG350C06LA1S
60 / -60
6.3 / -4.8
32 / 55
36 / 70
3
20
1~3/-1~-3
1041/951
25.1/19.3
N+P
SOP8L
电池保护板
MP
HYG350C06LA1S
Product Features:

The N+P structure MOSFET in SOP8L package features VDS 60 V and RDS(on) 32 Ohm/55 Ohm , u...

HYG110C03LR1D4
-30 / 30
-17 / 25
14 / 30
18 / 55
21/21
20/20
1~3/-1~-3
762/1300
15.9/20.2
N+P
TO-252-4L
MP
HYG110C03LR1D4
Product Features:

This is a 30V,11.5/24.5mΩ, TO-252-4L package product,using trench structure technology, It...

HYG190C04LA1D4
-40 / 40
-16.5 / 23
21 / 40
29 / 62
21.4/21.4
20/20
1~3/-1~-3
631/1012
14.3/20.1
N+P
TO-252-4L
MP
HYG190C04LA1D4
Product Features:

This is a 40V,17/35mΩ, TO-252-4L package product,using trench structure technology, It is ...

HYG170C03LR1S
-30 / 30
-8 / 9.5
16.5 / 30
24.5 / 55
3.0/3.0
20/20
1~3/-1~-3
446/1210
13.7/18.5
N+P
SOP8L
/
AOS4606
MP
HYG170C03LR1S
Product Features:

The N+P structure MOSFET in SOP8L package features VDS 30 V and RDS(on) 12.9/21.6 Ohm, usi...

HYG320C06LA1S
-60 / 60
-4.2 / 7
26 / 71
32 / 89
2.5/2.5
20/20
1~3/-1~-3
1100/890
18/17
N+P
SOP8L
/ / Signal drive
MP
HYG320C06LA1S
Product Features:

The N+P structure MOSFET in SOP8 package features VDS 60 V and RDS(on) 19/58 Ohm, using t...

HYG170C03LR1C2
30/-30
20/-19
19/27
28/55
18.7/25
20
1~3/-1~-3
446/1210
9.2/21
Half Bridge
PDFN8L(5x6)
/ / Wireless Charing
MP
HYG170C03LR1C2
Product Features:

The N+P structure MOSFET in PDFN8L(5x6) double-base island package features VDS 30 V and R...

HYG110C03LR1C2
30/-30
30/-19
11/27
18/55
25
20
1~3/-1~-3
714/1210
15.9/21
Half Bridge
PDFN8L(5x6)
/ / Wireless Charing
MP
HYG110C03LR1C2
Product Features:

The N+P structure MOSFET in PDFN8L(5x6) double-base island package features VDS 30 V and R...