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Half Bridge

HYG320C06LA1S

HYG320C06LA1S

The N+P structure MOSFET in SOP8 package features VDS 60 V and RDS(on) 19/58 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as motor drives, battery management system, load switch and other application fields.

Features


Outstanding Gate Charge

Low input Capacitance

ROHS Compliant

Efficiency Improvement





Benefits


Low conduction losses

Strong shock resistance 

High reliability

Stable technical capability



  


Applications


Motor Drives

DC-DC  

HYG320C06LA1S

模型