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HYG320C06LA1S
The N+P structure MOSFET in SOP8 package features VDS 60 V and RDS(on) 19/58 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as motor drives, battery management system, load switch and other application fields.
Features
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
Efficiency Improvement
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Motor Drives
DC-DC
