Language
HYG110C03LR1C2
The N+P structure MOSFET in PDFN8L（5x6) double-base island package features VDS 30 V and RDS(on) 8.8/22 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as motor drives, DC-DC and other application fields.
Features
Low RDS(on)
Low input Capacitance
ROHS Compliant
100% DVDS Tested
100% UIL tested
Efficiency improvement
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Motor Drives
Wireless Charing
DC-DC
