The N+P structure MOSFET in TO-252-4L package features VDS 30 V and RDS(on) 14/21.5 Ohm, u...
此器件为 N 沟道、30V耐压、7.3/8.8mΩ内阻、DFN8L(0303)半桥结构封装产品,芯片采用Trench工艺设计。该器件抗冲击能力强,适合较低开关频率应用,可满足电机驱...
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