Language
HYG110C03LR1C2
The N+P-channel MOSFET in PDFN8L（5x6）pual pad package features VDS 30 V and RDS(on) 8.8/22 Ohm, using the Trench structure technology. It is suitable for low-frequency applications, such as motor drives, DC-DC and other application fields.
Streatures
Low RDS(on)
Low input Capacitance
ROHS Compliant
Efficiency Improvement
优势
Low conduction losses
应用
Motor Drives / DC-DC
