This is a 40V/-40V、18mΩ/31mΩ,SOP8L package product, using Trench structure technology, It ...
This is a 40/-40V,PDFN8L(5x6) package product, using Trench structure technology, It is su...
The N+P structure MOSFET in SOP8L package features VDS 60 V and RDS(on) 32 Ohm/55 Ohm , u...
This is a 30V,11.5/24.5mΩ, TO-252-4L package product,using trench structure technology, It...
This is a 40V,17/35mΩ, TO-252-4L package product,using trench structure technology, It is ...
The N+P structure MOSFET in SOP8L package features VDS 30 V and RDS(on) 12.9/21.6 Ohm, usi...
The N+P structure MOSFET in SOP8 package features VDS 60 V and RDS(on) 19/58 Ohm, using t...
The N+P structure MOSFET in PDFN8L(5x6) double-base island package features VDS 30 V and R...
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