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Half Bridge

Product Screening

Part
Vds Min (V)
ID@TC=25℃
RDS(on) Max 10V(mΩ)
RDS(on) Max 4.5V(mΩ)
PD@TC=25℃ (W)
Vgs(±V)
Vth (V)
Ciss Typ(pF)
Qg Typ(nC)
Configuration
Package
Application
同类型号
Status
HYG350C06LA1S
-125
5.8/-4.2
38/43
66/82.2
2.5
20
1~3/-1~-3
1040/950
25.1/19.3
N+P
SOP8L
电池保护板
MP
HYG350C06LA1S
Product Features:

The N+P structure MOSFET in SOP8L package features VDS 60 V and RDS(on) 32 Ohm/55 Ohm , u...

HYG170C03LR1S
-30 / 30
-8 / 9.5
16.5 / 30
24.5 / 55
3.0/3.0
20/20
1~3/-1~-3
446/1210
13.7/18.5
N+P
SOP8L
Motor drives / DC-DC
AOS4606
MP
HYG170C03LR1S
Product Features:

The N+P structure MOSFET in SOP8L package features VDS 30 V and RDS(on) 12.9/21.6 Ohm, usi...

HYG320C06LA1S
-60 / 60
-4.2 / 7
26 / 71
32 / 89
2.5/2.5
20/20
1~3/-1~-3
1100/890
18/17
N+P
SOP8L
Motor drives / DC-DC / Signal drive
MP
HYG320C06LA1S
Product Features:

The N+P structure MOSFET in SOP8 package features VDS 60 V and RDS(on) 19/58 Ohm, using t...

HYG170C03LR1C2
30/-30
20/-19
19/27
28/55
18.7/25
20
1~3/-1~-3
446/1210
9.2/21
Half Bridge
PDFN8L(5x6)
Motor drives / DC-DC / Wireless Charing
MP
HYG170C03LR1C2
Product Features:

The N+P structure MOSFET in PDFN8L(5x6) double-base island package features VDS 30 V and R...

HYG110C03LR1C2
30/-30
30/-19
11/27
18/55
25
20
1~3/-1~-3
714/1210
15.9/21
Half Bridge
PDFN8L(5x6)
DC-DC / Motor drives / Wireless Charing
MP
HYG110C03LR1C2
Product Features:

The N+P structure MOSFET in PDFN8L(5x6) double-base island package features VDS 30 V and R...

HYG190C04LA1D4
-40 / 40
-16.5 / 23
21 / 40
29 / 62
21.4/21.4
20/20
1~3/-1~-3
631/1012
14.3/20.1
N+P
TO-252-4L
电机驱动 / 信号驱动
MP
HYG190C04LA1D4
Product Features:

此器件为40V耐压、17/35mΩ内阻、 TO-252-4L N+P封装产品,芯片采用Trench工艺设计。该器件抗冲击能力强,适合较低开关频率应用,可满足电机驱动等应用领域。

HYG110C03LR1D4
-30 / 30
-17 / 25
14 / 30
18 / 55
21/21
20/20
1~3/-1~-3
762/1300
15.9/20.2
N+P
TO-252-4L
电机驱动 / 信号驱动
MP
HYG110C03LR1D4
Product Features:

此器件为30V耐压、11.5/24.5mΩ内阻、 TO-252-4L N+P封装产品,芯片采用Trench工艺设计。该器件抗冲击能力强,适合较低开关频率应用,可满足电机驱动/电池...