The N+P structure MOSFET in SOP8L package features VDS 60 V and RDS(on) 32 Ohm/55 Ohm , u...
The N+P structure MOSFET in SOP8L package features VDS 30 V and RDS(on) 12.9/21.6 Ohm, usi...
The N+P structure MOSFET in SOP8 package features VDS 60 V and RDS(on) 19/58 Ohm, using t...
The N+P structure MOSFET in PDFN8L(5x6) double-base island package features VDS 30 V and R...
此器件为40V耐压、17/35mΩ内阻、 TO-252-4L N+P封装产品,芯片采用Trench工艺设计。该器件抗冲击能力强,适合较低开关频率应用,可满足电机驱动等应用领域。
此器件为30V耐压、11.5/24.5mΩ内阻、 TO-252-4L N+P封装产品,芯片采用Trench工艺设计。该器件抗冲击能力强,适合较低开关频率应用,可满足电机驱动/电池...
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