Half Bridge_N+P MOSFET_MOSFET_Products & Scheme_产品_Huayi Microelectronics Co., Ltd.

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Half Bridge

Product Screening

Vds Min (V)

-125
-100
-60
-40
-30
-20
20
25
30
40
45
60
65
68
70
80
85
90
100
115
120
125
135
150
200
1000
40/-40
30/-30

Reset Condition

ID@TC=25℃

Reset Condition

RDS(on) Max 10V(mΩ)

Reset Condition

RDS(on) Max 4.5V(mΩ)

Reset Condition

PD@TC=25℃ (W)

Reset Condition

Vgs(±V)

Reset Condition

Vth (V)

Reset Condition

Ciss Typ(pF)

Reset Condition

Qg Typ(nC)

Reset Condition

Configuration

Reset Condition

Package

Reset Condition

Application

Reset Condition

Part

Vds Min (V)

ID@TC=25℃

RDS(on) Max 10V(mΩ)

RDS(on) Max 4.5V(mΩ)

PD@TC=25℃ (W)

Vgs(±V)

Vth (V)

Ciss Typ(pF)

Qg Typ(nC)

Configuration

Package

Application

同类型号

Status

HYG350C06LA1S

-125

5.8/-4.2

38/43

66/82.2

2.5

20

1~3/-1~-3

1040/950

25.1/19.3

N+P

SOP8L

电池保护板

MP

HYG350C06LA1S

Product Features：

The N+P structure MOSFET in SOP8L package features VDS 60 V and RDS(on) 32 Ohm/55 Ohm , u...

HYG170C03LR1S

-30 / 30

-8 / 9.5

16.5 / 30

24.5 / 55

3.0/3.0

20/20

1~3/-1~-3

446/1210

13.7/18.5

N+P

SOP8L

Motor drives / DC-DC

AOS4606

MP

HYG170C03LR1S

Product Features：

The N+P structure MOSFET in SOP8L package features VDS 30 V and RDS(on) 12.9/21.6 Ohm, usi...

HYG320C06LA1S

-60 / 60

-4.2 / 7

26 / 71

32 / 89

2.5/2.5

20/20

1~3/-1~-3

1100/890

18/17

N+P

SOP8L

Motor drives / DC-DC / Signal drive

MP

HYG320C06LA1S

Product Features：

The N+P structure MOSFET in SOP8 package features VDS 60 V and RDS(on) 19/58 Ohm, using t...

HYG170C03LR1C2

30/-30

20/-19

19/27

28/55

18.7/25

20

1~3/-1~-3

446/1210

9.2/21

Half Bridge

PDFN8L(5x6)

Motor drives / DC-DC / Wireless Charing

MP

HYG170C03LR1C2

Product Features：

The N+P structure MOSFET in PDFN8L（5x6) double-base island package features VDS 30 V and R...

HYG110C03LR1C2

30/-30

30/-19

11/27

18/55

25

20

1~3/-1~-3

714/1210

15.9/21

Half Bridge

PDFN8L(5x6)

DC-DC / Motor drives / Wireless Charing

MP

HYG110C03LR1C2

Product Features：

The N+P structure MOSFET in PDFN8L（5x6) double-base island package features VDS 30 V and R...

HYG190C04LA1D4

-40 / 40

-16.5 / 23

21 / 40

29 / 62

21.4/21.4

20/20

1~3/-1~-3

631/1012

14.3/20.1

N+P

TO-252-4L

电机驱动 / 信号驱动

MP

HYG190C04LA1D4

Product Features：

此器件为40V耐压、17/35mΩ内阻、 TO-252-4L N+P封装产品，芯片采用Trench工艺设计。该器件抗冲击能力强，适合较低开关频率应用，可满足电机驱动等应用领域。

HYG110C03LR1D4

-30 / 30

-17 / 25

14 / 30

18 / 55

21/21

20/20

1~3/-1~-3

762/1300

15.9/20.2

N+P

TO-252-4L

电机驱动 / 信号驱动

MP

HYG110C03LR1D4

Product Features：

此器件为30V耐压、11.5/24.5mΩ内阻、 TO-252-4L N+P封装产品，芯片采用Trench工艺设计。该器件抗冲击能力强，适合较低开关频率应用，可满足电机驱动/电池...

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